Part Number Hot Search : 
A4810 B80NF 85103 2SC3502C MB506 MA3JP02F 24M05 IZ8138A
Product Description
Full Text Search

MRF21125 - RF Power Field Effect Transistors

MRF21125_4304570.PDF Datasheet

 
Part No. MRF21125 MRF21125R3 MRF21125SR3
Description RF Power Field Effect Transistors

File Size 421.36K  /  12 Page  

Maker


Freescale Semiconductor, Inc



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF21125
Maker: MOTOROLA
Pack: 高频管
Stock: 66
Unit price for :
    50: $27.69
  100: $26.31
1000: $24.92

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com
Download [ ]
[ MRF21125 MRF21125R3 MRF21125SR3 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF21125 MRF21125R3 MRF21125SR3 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF21125 ]

[ Price & Availability of MRF21125 by FindChips.com ]

 Full text search : RF Power Field Effect Transistors


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
IRFF130 IRFF131 IRFF132 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
General Electric Solid State
GE Solid State
MRF6S21100NR1 MRF6S21100NBR1 RF Power Field Effect Transistors
FREESCALE[Freescale Semiconductor, Inc]
MRF8P20160HR3 RF Power Field Effect Transistors
Motorola Semiconductor Products
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
MRF8S19260HR6 MRF8S19260HSR6 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF281 MRF281SR1 MRF281SR106 MRF281ZR1 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
MRF1517NT108 RF Power Field Effect Transistor
Freescale Semiconductor, Inc
Freescale Semiconductor...
UFT150-28 RF POWER FIELD-EFFECT TRANSISTOR
Advanced Semiconductor, Inc.
 
 Related keyword From Full Text Search System
MRF21125 purpose MRF21125 Operation MRF21125 type MRF21125 Ic on line MRF21125 gdcy
MRF21125 nec MRF21125 Engine MRF21125 panasonic MRF21125 circuit diagram MRF21125 Interrupt
 

 

Price & Availability of MRF21125

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.5522611141205